Tanga nemhando dzakasiyana dzemasero

1. ^{Nhanganyaya kune Masero}

(1) Muchidimbu:Masero ndiwo akakosha zvikamu zvephotovoltaic simba rekugadzira, uye nzira yavo yeunyanzvi uye nhanho yemaitiro inokanganisa zvakananga kugadzirwa kwemagetsi uye hupenyu hwebasa re photovoltaic modules.Photovoltaic masero ari pakati anosvika eiyo photovoltaic industry chain.Iwo semiconductor matete mapepa anogona kushandura simba rechiedza rezuva kuita simba remagetsi rinowanikwa nekugadzirisa single/poly crystalline silicon wafers.

Nheyo yephotovoltaic simba rekugadzirainobva ku photoelectric effect ye semiconductors.Kuburikidza nekuvhenekerwa, musiyano ungangoita unogadzirwa pakati pezvikamu zvakasiyana zvemuhomogeneous semiconductors kana semiconductors akasanganiswa nesimbi.Inoshandurwa kubva pamafotoni (masaisai emwenje) kuita maerekitironi uye simba rechiedza kuita simba remagetsi kuita voltage.uye ikozvino maitiro.Iyo silicon wafers inogadzirwa mukumusoro link haigone kuitisa magetsi, uye yakagadziriswa solar maseru anoona simba rekugadzira simba rephotovoltaic modules.

(2) Kuronga:Kubva pamaonero emhando ye substrate, maseru anogona kukamurwa kuva marudzi maviri:P-mhando masero uye N-mhando masero.Doping boron musilicon crystals inogona kuita P-type semiconductors;doping phosphorus inogona kuita N-mhando semiconductors.Iyo mbishi yeP-mhando bhatiri ndeye P-mhando silicon wafer (yakaiswa ne boron), uye iyo mbishi yeN-mhando bhatiri iN-mhando silicon wafer (yakaiswa phosphorus).P-mhando masero anonyanya kusanganisira BSF (yakajairika aruminiyamu back field cell) uye PERC (passivated emitter uye sero reseri);N-mhando masero pari zvino akawanda matekinoroji arikoTOPCon(tunneling oxide layer passivation contact) uye HJT (mukati mutete firimu Hetero junction).Iyo N-mhando bhatiri inofambisa magetsi kuburikidza nemaerekitironi, uye iyo chiedza-induced attenuation inokonzerwa ne boron-oxygen atomu pair ishoma, saka photoelectric kutendeuka kushanda kwakakwirira.

3. Kuiswa kwePERC bhatiri

(1) Pfupiso: Zita rakazara rebhatiri rePERC “emitter uye back passivation bhatiri”, iro rinongobva kuAl-BSF chimiro cheyakajairwa aluminium back field bhatiri.Kubva pakurongeka kwemaonero, maviri acho akafanana, uye bhatiri rePERC rinongove riine imwe yekumashure passivation layer pane BSF bhatiri (iyo yapfuura chizvarwa bhatiri tekinoroji).Kuumbwa kweiyo yekumashure passivation stack inobvumira iyo PERC sero kudzikisa kukurumidza kudzokorodza kweiyo kumashure kwepamusoro uku ichivandudza kutaridzika kwechiedza cheshure uye nekuvandudza kushandurwa kwesero.

(2) Nhoroondo yebudiriro: Kubva 2015, mabhatiri emumba ePERC akapinda mudanho rekukura nekukurumidza.Muna 2015, mudzimba PERC bhatiri rekugadzira simba rakasvika panzvimbo yekutanga pasirese, accounting ye35% yepasi rose PERC bhatiri rekugadzira.Muna 2016, iyo "Photovoltaic Yepamusoro Runner Chirongwa" yakaitwa neNational Energy Administration yakatungamira kutanga zviri pamutemo kugadzirwa kwemaindasitiri akawanda ePERC maseru muChina, neavhareji inoshanda ye20.5%.2017 inguva yekushanduka kwemugove wemusika wephotovoltaic masero.Mugove wemusika wemasero akajairwa akatanga kuderera.Iyo yemukati PERC cell musika share yakawedzera kusvika 15%, uye kugona kwayo kugadzira kwakawedzera kusvika 28.9GW;

Kubva 2018, mabhatiri ePERC ave akanyanya mumusika.Muna 2019, kugadzirwa kwakakura kwemaseru ePERC kuchawedzera, nekugadzirwa kwakawanda kwe22.3%, kuverengera anopfuura makumi mashanu muzana ehuwandu hwekugadzira, ichipfuura zviri pamutemo masero eBSF kuti ive yakanyanya kufambiswa photovoltaic cell tekinoroji.Zvinoenderana nekufungidzira kweCPIA, panosvika 2022, huwandu hwekugadzirwa kwemasero ePERC huchasvika 23.3%, uye huwandu hwekugadzira huchaverengera kupfuura 80%, uye chikamu chemusika chicharamba chiri chekutanga.

4. TOPCon bhatiri

(1) Tsanangudzo:TOPCon bhatiri, kureva kuti, tunneling oxide layer passivation contact cell, inogadzirirwa kuseri kwebhatiri ine ultra-thin tunneling oxide layer uye dhizaini ye polysilicon yakatetepa yakanyanya, iyo pamwe chete inoumba passivation yekubata chimiro.Muna 2013, yakakurudzirwa neFraunhofer Institute kuGermany.Kuenzaniswa nePERC maseru, imwe ndeye kushandisa n-mhando silicon seyo substrate.Kuenzaniswa ne-p-mhando silicon masero, n-mhando silicon ine hurefu hurefu hwekutakura hupenyu, yakanyanya kutendeuka inoshanda, uye isina simba chiedza.Yechipiri ndeyekugadzirira passivation layer (ultra-thin silicon oxide SiO2 uye doped poly silicon yakaonda layer Poly-Si) kumashure kuti igadzire yekubata passivation chimiro chinoparadzanisa zvachose dunhu redoped kubva kusimbi, iyo inogona kuwedzera kuderedza kumashure. pamusoro.Iyo vashoma mutakuri wekubatanidza mukana pakati pepamusoro nesimbi inovandudza shanduko yebhatiri.